Statistical Analysis of the Influence of Temperature on Microstructure Contact Surfaces on BaTiO3-Ceramics Doped With Ho2O3

Authors

  • S. Janković Mathematical Institute of SASA
  • V. V. Mitić University of Niš, Faculty of Electronic Engineering; Institute of Technical Sciences of SASA
  • Lj. Kocić University of Niš, Faculty of Electronic Engineering
  • V. Paunović University of Niš, Faculty of Electronic Engineering
  • M. Miljković University of Niš, SEM Laboratory

Abstract

The materials based on BaTiO3 can be controlled using different technological parameters and different additives. The influence of different temperature levels of sintering (1320°C, 1350°C and 1380°C) on the size of contact area for 0.1% Ho2O3 doped BaTiO3-ceramics has been investigated. Microstructural investigations were carried out using scanning electron microscopy (JEOL-JSM 5300) equipped with EDS (QX 2000S) system. Grain size distribution was determined by quantitative metallography method. The new correlation between microstructure and dielectric properties of doped BaTiO3-ceramics based on fractal geometry and contact surface probability is recently developed. The presented results indicate that statistical model of contact surfaces is important for the prognosis of BaTiO3-ceramics microstructure and dielectric properties.

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Published

2017-12-13

Issue

Vol. 46 No. 3 (2014)

Section

Articles