Statistical Analysis of the Influence of Temperature on Microstructure Contact Surfaces on BaTiO3-Ceramics Doped With Ho2O3
Abstract
The materials based on BaTiO3 can be controlled using different technological parameters and different additives. The influence of different temperature levels of sintering (1320°C, 1350°C and 1380°C) on the size of contact area for 0.1% Ho2O3 doped BaTiO3-ceramics has been investigated. Microstructural investigations were carried out using scanning electron microscopy (JEOL-JSM 5300) equipped with EDS (QX 2000S) system. Grain size distribution was determined by quantitative metallography method. The new correlation between microstructure and dielectric properties of doped BaTiO3-ceramics based on fractal geometry and contact surface probability is recently developed. The presented results indicate that statistical model of contact surfaces is important for the prognosis of BaTiO3-ceramics microstructure and dielectric properties.
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