Electrical Properties of Magnesium Titanate Ceramics Post-Sintered by Hot Isostatic Pressing
Post-sintering of magnesium titanate ceramics by hot isostatic pressing (HIP) in an oxygen-free atmosphere significantly alters various electrical properties of the product. In particular, the sintered material becomes a semiconductor. The aims of this paper are: to extend our investigations of the electrical properties of this material by expanding the frequency range of measurements, to design interpolation formulas for the frequency dependence of the complex relative permittivity, and to propose HIP-sintered magnesium titanate as a material for thermistors that have a negative-temperature-coefficient resistance (NTCR), as well as for varistors.
Authors retain copyright of the published article and have the right to use the article in the ways permitted to third parties under the Creative Commons Attribution 4.0 International license. Full bibliographic information (authors, article title, journal title, volume, issue, pages) about the original publication must be provided and a link must be made to the article's DOI. This license allows to copy and redistribute the material in any medium or format, remix, transform, and build upon it for any purpose, even commercially, as long as appropriate credit is given to the original author(s), a link to the license is provided and it is indicated if changes were made.