Optical Properties of CuSe Thin Films – Band Gap Determination

Milica Petrović; Martina Gilić; Jovana Ćirković; Maja Romčević; Nebojša Romčević; Jelena Trajić; Ibrahim Yahia

Optical Properties of CuSe Thin Films – Band Gap Determination

Milica Petrović Institute of Physics, University of Belgrade
Martina Gilić Institute of Physics, University of Belgrade
Jovana Ćirković Institute for Multidisciplinary Research, University of Belgrade
Maja Romčević Institute of Physics, University of Belgrade
Nebojša Romčević Institute of Physics, University of Belgrade
Jelena Trajić Institute of Physics, University of Belgrade
Ibrahim Yahia Nano-Science and Semiconductors Labs., Physics department, Faculty of Education, Ain Shams University

Abstract

Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV–VIS–NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.

Published

2017-12-13

Issue

Vol 49 No 2 (2017)

Section

Articles

Copyright

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