Microstructure and Thermal Properties of Cu-SiC Composite Materials Depending on the Sintering Technique

Authors

  • Marcin Chmielewski Institute of Electronic Materials Technology
  • Katarzyna Pietrzak Institute of Electronic Materials Technology
  • Agata Strojny-Nedza Institute of Electronic Materials Technology
  • Kamil Kaszyca Institute of Electronic Materials Technology
  • Rafal Zybala Faculty of Materials Science and Engineering, Warsaw University of Technology
  • Piotr Bazarnik Faculty of Materials Science and Engineering, Warsaw University of Technology
  • Malgorzata Lewandowska Faculty of Materials Science and Engineering, Warsaw University of Technology
  • Szymon Nosewicz Institute of Fundamental Technological Research, Polish Academy of Sciences

Abstract

The presented paper investigates the relationship between the microstructure and thermal properties of copper–silicon carbide composites obtained through hot pressing (HP) and spark plasma sintering (SPS) techniques. The microstructural analysis showed a better densification in the case of composites sintered in the SPS process. TEM investigations revealed the presence of silicon in the area of metallic matrix in the region close to metal-ceramic boundary. It is the product of silicon dissolving process in copper occurring at an elevated temperature. The Cu-SiC interface is significantly defected in composites obtained through the hot pressing method, which has a major influence on the thermal conductivity of materials.

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Published

2017-12-13

Issue

Vol. 49 No. 1 (2017)

Section

Articles