Optical Properties of CuSe Thin Films – Band Gap Determination

Authors

  • Milica Petrović Institute of Physics, University of Belgrade
  • Martina Gilić Institute of Physics, University of Belgrade
  • Jovana Ćirković Institute for Multidisciplinary Research, University of Belgrade
  • Maja Romčević Institute of Physics, University of Belgrade
  • Nebojša Romčević Institute of Physics, University of Belgrade
  • Jelena Trajić Institute of Physics, University of Belgrade
  • Ibrahim Yahia Nano-Science and Semiconductors Labs., Physics department, Faculty of Education, Ain Shams University

Abstract

Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV–VIS–NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.

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Published

2017-12-13

Issue

Vol. 49 No. 2 (2017)

Section

Articles

License

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