Thermal Annealing of Ag Implanted Silicon: Relationship between Structural and Optical Properties
Low energy Ag ions were implanted into silicon and annealed at different temperatures in order to generate plasmonic active silicon hybrids. It was found that as the ion fluence of irradiation was increased, a monotonic decrease in the absorption spectra in the ultraviolet region occurs, due to amorphization and macro structuring of the Si surface. At the same time, the optical spectra are characterized by a strong band after implantation presenting the contribution of the surface plasmon resonance (SPR) of Ag nanoparticles. After heat treatment at 500 and 600 ºC, the SPR peak shifts to lower wavelengths, as compared to as implanted samples, whereas the plasmon position shifts to higher wavelengths for annealing at 700 °C. This observation can be explained by either an out-diffusion of Ag or by stress relaxation and recrystallization of silicon.
Authors retain copyright of the published article and have the right to use the article in the ways permitted to third parties under the Creative Commons Attribution 4.0 International license. Full bibliographic information (authors, article title, journal title, volume, issue, pages) about the original publication must be provided and a link must be made to the article's DOI. This license allows to copy and redistribute the material in any medium or format, remix, transform, and build upon it for any purpose, even commercially, as long as appropriate credit is given to the original author(s), a link to the license is provided and it is indicated if changes were made.